Typical Electrical Characteristics
-20
3
-15
V GS = -10V
-6.0
-5.0
-4.5
2.5
V GS = -3.5V
- 4.0
-10
-5
-4.0
-3.5
-3.0
2
1.5
1
-4.5
-5.0
-6.0
-10
0
0
-1
-2
-3
-4
0.5
0
-4
-8
-12
-16
-20
1.6
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
I D = -4.0A
I D , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
V GS = -10V
1.4
V GS = -10V
1.2
1
0.8
1.5
1
T J = 125°C
25°C
-55°C
0.6
-50
-25
0
25
50
75
100
125
150
0.5
0
-4
-8
-12
-16
-20
T , JUNCTION TEMPERATURE (°C)
J
I
D
, DRAIN CURRENT (A)
-20
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
1.2
-15
V DS = -10V
T J = -55°C
125°C
1.1
V DS = V GS
I D = -250μA
-10
25°C
1
0.9
0.8
-5
0.7
0
-1
-2
-3
-4
-5
-6
0.6
-50
-25
0
25
50
75
100
125
150
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
T J , JUNCTION TEMPERATURE (°C)
Figure 6. Gate Threshold Variation with
Temperature.
NDS8947.SAM
相关PDF资料
NDS9400A MOSFET P-CH 30V 3.4A 8-SOIC
NDS9407 MOSFET P-CH 60V 3A 8-SOIC
NDS9945 MOSFET 2N-CH 60V 3.5A 8-SOIC
NDS9948 MOSFET 2P-CH 60V 2.3A 8-SOIC
NDS9952A MOSFET N+P 30V 2.9A 8-SOIC
NDT014L MOSFET N-CH 60V 2.8A SOT-223
NDT014 MOSFET N-CH 60V 2.7A SOT-223-4
NDT2955 MOSFET P-CH 60V 2.5A SOT-223-4
相关代理商/技术参数
NDS8947 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP LOGIC SO-8
NDS8947_Q 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8958 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8958 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NP SO-8
NDS8958_Q 功能描述:MOSFET Dual N/P Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8961 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8961_F011 功能描述:MOSFET Dual N-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8963 制造商:NSC 制造商全称:National Semiconductor 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor